Перегляд за автором "Ivashchenko, V.I."

Сортувати за: Порядок: Результатів:

  • Atomic and electronic structure of a-SiC 
    Ivashchenko, V.I.; Shevchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Molecular dynamics (MD) simulations based on an empirical potential approach have provided detailed information about chemical ordering and the structural short-range order in stoichiometric amorphous silicon carbide ...
  • Characterization of Ti–B–C–N films deposited by dc magnetron sputtering of bicomponent Ti/B₄C target 
    Onoprienko, A.A.; Ivashchenko, V.I.; Timofeeva, I.I.; Sinelnitchenko, А.К.; Butenko, О.А. (Сверхтвердые материалы, 2015)
    Quaternary Ti–B–C–N films have been deposited onto Si (100) substrates by dc magnetron sputtering of bi-component Ti/B₄C target in an Ar/N₂ gas mixture with different amounts of nitrogen in the mixture (from 0 to 50%). The ...
  • Comparative investigation of NbN and Nb–Si–N films: experiment and theory 
    Ivashchenko, V.I.; Scrynskyy, P.L.; Lytvyn, O.S.; Butenko, O.O.; Sinelnichenko, O.K.; Gorb, L.; Hill, F.; Leszczynski, J.; Kozak, A.O. (Сверхтвердые материалы, 2014)
    NbN and Nb–Si–N films have been deposited by magnetron sputtering of the Nb and Si targets on silicon wafers at various powers supplied to the Nb target. The films have been investigated by an atomic force microscope, X-ray ...
  • Deposition and characterization of thin Si–B–C–N films by dc reactive magnetron sputtering of composed Si/B₄C target 
    Onoprienko, A.A.; Ivashchenko, V.I.; Kozak, A.O.; Sinelnichenko, A.K.; Tomila, T.V. (Сверхтвердые материалы, 2019)
    The effect of the gas mixture composition on the structure, chemical bond character and hardness of Si–B–C–N films was systematically studied. A series of Si–B–C–N films was deposited by reactive dc magnetron sputtering ...
  • Phase transformation B1 to B2 in TiC, TiN, ZrC and ZrN under pressure 
    Ivashchenko, V.I.; Turchi, P.E.A.; Shevchenko, V.I. (Condensed Matter Physics, 2013)
    Phase stability of various phases of MX (M=Ti, Zr; X=C, N) at equilibrium and under pressure is examined based on first-principles calculations of the electronic and phonon structures. The results reveal that all B1 ...
  • Tight-binding description of TiCx 
    Ivashchenko, V.I.; Turchi, P.E.A.; Shevchenko, V.I.; Ivashchenko, L.A.; Porada, O.K. (Condensed Matter Physics, 2004)
    A parametrized non-orthogonal tight-binding (TB) method combined with the coherent-potential-approximation is applied to the study of the electronic structure of disordered off-stoichiometric TiCx, the lattice relaxation ...